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CYDM256B16 CYDM128B16 CYDM064B16
1.8V 4K/8K/16K x 16 MoBL Dual-Port Static RAM
(R)
Features
* True dual-ported memory cells that allow simultaneous access of the same memory location * 4/8/16K x 16 organization * High-speed access: 40 ns * Ultra Low operating power -- Active: ICC = 15 mA (typical) at 55 ns -- Active: ICC = 25 mA (typical) at 40 ns -- Standby: ISB3 = 2 A (typical) * Small footprint: Available in a 6x6 mm 100-pin Lead(Pb)-free vfBGA * Port-independent 1.8V, 2.5V, and 3.0V I/Os * Full asynchronous operation * Automatic power-down * Pin select for Master or Slave * Expandable data bus to 32 bits with Master/Slave chip select when using more than one device * On-chip arbitration logic * Semaphores included to permit software handshaking between ports * Input Read Registers and Output Drive Registers * INT flag for port-to-port communication * Separate upper-byte and lower-byte control * Industrial temperature ranges
Selection Guide for VCC = 1.8V
CYDM256B16, CYDM128B16, CYDM064B16 -40 Port I/O Voltages (P1-P2) Maximum Access Time Typical Operating Current Typical Standby Current for ISB1 Typical Standby Current for ISB3 1.8V-1.8V 40 25 2 2 CYDM256B16, CYDM128B16, CYDM064B16 -55 1.8V-1.8V 55 15 2 2 Unit ns mA A A
Selection Guide for VCC = 2.5V
CYDM256B16, CYDM128B16, CYDM064B16 -40 Port I/O Voltages (P1-P2) Maximum Access Time Typical Operating Current Typical Standby Current for ISB1 Typical Standby Current for ISB3 2.5V-2.5V 40 39 6 4 CYDM256B16, CYDM128B16, CYDM064B16 -55 2.5V-2.5V 55 28 6 4 Unit ns mA A A
Selection Guide for VCC = 3.0V
CYDM256B16, CYDM128B16, CYDM064B16 -40 Port I/O Voltages (P1-P2) Maximum Access Time Typical Operating Current Typical Standby Current for ISB1 Typical Standby Current for ISB3 3.0V-3.0V 40 49 7 6 CYDM256B16, CYDM128B16, CYDM064B16 -55 3.0V-3.0V 55 42 7 6 Unit ns mA A A
Cypress Semiconductor Corporation Document #: 001-00217 Rev. *E
*
198 Champion Court
*
San Jose, CA 95134-1709 * 408-943-2600 Revised January 25, 2007
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CYDM256B16 CYDM128B16 CYDM064B16
I/O[15:0]L UBL LBL IO Control IO Control
I/O[15:0]R UBR LBR
16K X 16 Dual Ported Array
Address Decode
Address Decode
A[13:0]L CE L OE L R/W L SEML BUSY L INTL Mailboxes
Interrupt Arbitration Semaphore
A [13:0]R CE R OE R R/W R SEMR BUSY R
INTR
M/S
IRR0 ,IRR1
CEL OEL R/WL
Input Read Register and Output Drive Register
CE R OE R R/W R ODR0 - ODR4
SFEN
Figure 1. Top Level Block Diagram[1, 2]
Notes: 1. A0-A11 for 4K devices; A0-A12 for 8K devices; A0-A13 for 16K devices. 2. BUSY is an output in master mode and an input in slave mode.
Document #: 001-00217 Rev. *E
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CYDM256B16 CYDM128B16 CYDM064B16
Pin Configurations [3, 4, 5, 6, 7]
100-Ball 0.5-mm Pitch BGA Top View CYDM064B16/CYDM128B16/CYDM256B16
1 A B C A5R A3R A0R 2 A8R A4R A1R 3 A11R A7R A2R 4 UB R A9R A6R INTR INTL A1L A12L [3] LB L IRR0[5] UB L 4 5 VSS CE R LB R A10R VSS VCC OE L CE L VCC SEML 5 6 SEMR R/W R IRR1[6] A12R
[3]
7 I/O 15R OE R I/O 14R I/O 13R I/O 4R I/O 3R I/O 11L VDDIOL I/O 4L I/O 0L 7
8 I/O 12R VDDIOR I/O 11R I/O 8R VDDIOR I/O 0R I/O 12L NC [7] I/O 6L I/O 2L 8
9 I/O 10R I/O 9R I/O 7R I/O 5R I/O 1R I/O 15L I/O 14L NC [7] I/O 8L I/O 5L 9
10 VSS I/O 6R VSS I/O 2R VSS VDDIOL I/O 13L I/O 10L I/O 9L I/O 7L 10
D ODR4 E VSS
ODR2 BUSYR M/S ODR3
VSS VSS I/O 3L I/O 1L VSS R/W L 6
F SFEN G ODR0 H J K A0L A3L A6L 1
ODR1 BUSYL A2L A4L A7L A8L 2 A5L A9L A10L A11L 3
Notes: 3. A12L and A12R are NC pins for CYDM064B16. 4. IRR functionality is not supported for the CYDM256B16 device. 5. This pin is A13L for CYDM256B16 device. 6. This pin is A13R for CYDM256B16 device. 7. Leave this pin unconnected. No trace or power component can be connected to this pin.
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CYDM256B16 CYDM128B16 CYDM064B16
Pin Definitions
Left Port CEL R/WL OEL A0L-A13L I/O0L-I/O15L SEML UBL LBL INTL BUSYL Right Port CER R/WR OER A0R-A13R I/O0R-I/O15R SEMR UBR LBR INTR BUSYR IRR0, IRR1 ODR0-ODR4 SFEN M/S VCC GND VDDIOL VDDIOR NC Chip Enable Read/Write Enable Output Enable Address (A0-A11 for 4K devices; A0-A12 for 8K devices; A0-A13 for 16K devices). Data Bus Input/Output for x16 devices Semaphore Enable Upper Byte Select (I/O8-I/O15). Lower Byte Select (I/O0-I/O7). Interrupt Flag Busy Flag Input Read Register for CYDM064B16, CYDM128B16. A13L, A13R for CYDM256B16. Output Drive Register; These outputs are Open Drain. Special Function Enable Master or Slave Select Core Power Ground Left Port I/O Voltage Right Port I/O Voltage No Connect. Leave this pin Unconnected. The CYDM256B16, CYDM128B16, CYDM064B16 are available in 100-ball 0.5-mm pitch Ball Grid Array (BGA) packages. Power Supply The core voltage (VCC) can be 1.8V, 2.5V or 3.0V, as long as it is lower than or equal to the I/O voltage. Each port can operate on independent I/O voltages. This is determined by what is connected to the VDDIOL and VDDIOR pins. The supported I/O standards are 1.8V/2.5V LVCMOS and 3.0V LVTTL. Write Operation Data must be set up for a duration of tSD before the rising edge of R/W in order to guarantee a valid write. A write operation is controlled by either the R/W pin (see Write Cycle No. 1 waveform) or the CE pin (see Write Cycle No. 2 waveform). Required inputs for non-contention operations are summarized in Table 1. If a location is being written to by one port and the opposite port attempts to read that location, a port-to-port flowthrough delay must occur before the data is read on the output; otherwise the data read is not deterministic. Data will be valid on the port tDDD after the data is presented on the other port. Read Operation When reading the device, the user must assert both the OE and CE pins. Data will be available tACE after CE or tDOE after OE is asserted. If the user wishes to access a semaphore flag, Description
Functional Description
The CYDM256B16, CYDM128B16, CYDM064B16 are low-power CMOS 4K, 8K,16K x 16 dual-port static RAMs. Arbitration schemes are included on the devices to handle situations when multiple processors access the same piece of data. Two ports are provided, permitting independent, asynchronous access for reads and writes to any location in memory. The devices can be utilized as standalone 16-bit dual-port static RAMs or multiple devices can be combined in order to function as a 32-bit or wider master/slave dual-port static RAM. An M/S pin is provided for implementing 32-bit or wider memory applications without the need for separate master and slave devices or additional discrete logic. Application areas include interprocessor/multiprocessor designs, communications status buffering, and dual-port video/graphics memory. Each port has independent control pins: Chip Enable (CE), Read or Write Enable (R/W), and Output Enable (OE). Two flags are provided on each port (BUSY and INT). BUSY signals that the port is trying to access the same location currently being accessed by the other port. The Interrupt flag (INT) permits communication between ports or systems by means of a mail box. The semaphores are used to pass a flag, or token, from one port to the other to indicate that a shared resource is in use. The semaphore logic is comprised of eight shared latches. Only one side can control the latch (semaphore) at any time. Control of a semaphore indicates that a shared resource is in use. An automatic power-down feature is controlled independently on each port by a Chip Enable (CE) pin. Document #: 001-00217 Rev. *E
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CYDM256B16 CYDM128B16 CYDM064B16
then the SEM pin must be asserted instead of the CE pin, and OE must also be asserted. Interrupts The upper two memory locations may be used for message passing. The highest memory location (FFF for the CYDM064B16, 1FFF for the CYDM128B16, 3FFF for the CYDM256B16) is the mailbox for the right port and the second-highest memory location (FFE for the CYDM064B16, 1FFE for the CYDM128B16, 3FFE for the CYDM256B16) is the mailbox for the left port. When one port writes to the other port's mailbox, an interrupt is generated to the owner. The interrupt is reset when the owner reads the contents of the mailbox. The message is user-defined. Each port can read the other port's mailbox without resetting the interrupt. The active state of the busy signal (to a port) prevents the port from setting the interrupt to the winning port. Also, an active busy to a port prevents that port from reading its own mailbox and, thus, resetting the interrupt to it. If an application does not require message passing, do not connect the interrupt pin to the processor's interrupt request input pin. On power up, an initialization program should be run and the interrupts for both ports must be read to reset them. The operation of the interrupts and their interaction with Busy are summarized in Table 2. Busy The CYDM256B16, CYDM128B16, CYDM064B16 provide on-chip arbitration to resolve simultaneous memory location access (contention). If both ports' CEs are asserted and an address match occurs within tPS of each other, the busy logic will determine which port has access. If tPS is violated, one port will definitely gain permission to the location, but it is not predictable which port will get that permission. BUSY will be asserted tBLA after an address match or tBLC after CE is taken LOW. Master/Slave A M/S pin is provided in order to expand the word width by configuring the device as either a master or a slave. The BUSY output of the master is connected to the BUSY input of the slave. This will allow the device to interface to a master device with no external components. Writing to slave devices must be delayed until after the BUSY input has settled (tBLC or tBLA), otherwise, the slave chip may begin a write cycle during a contention situation. When tied HIGH, the M/S pin allows the device to be used as a master and, therefore, the BUSY line is an output. BUSY can then be used to send the arbitration outcome to a slave. Input Read Register The Input Read Register (IRR) captures the status of two external input devices that are connected to the Input Read pins. The contents of the IRR read from address x0000 from either port. During reads from the IRR, DQ0 and DQ1 are valid bits and DQ<15:2> are don't care. Writes to address x0000 are not allowed from either port. Address x0000 is not available for standard memory accesses when SFEN = VIL. When SFEN = VIH, address x0000 is available for memory accesses. The inputs will be 1.8V/2.5V LVCMOS or 3.0V LVTTL, depending on the core voltage supply (VCC). Refer to Table 3 for Input Read Register operation. IRR is not available in the CYDM256B16, as the IRR pins are used as extra address pins A13L and A13R. Output Drive Register The Output Drive Register (ODR) determines the state of up to five external binary state devices by providing a path to VSS for the external circuit. These outputs are Open Drain. The five external devices can operate at different voltages (1.5V VDDIO 3.5V) but the combined current cannot exceed 40 mA (8 mA max for each external device). The status of the ODR bits are set using standard write accesses from either port to address x0001 with a "1" corresponding to on and "0" corresponding to off. The status of the ODR bits can be read with a standard read access to address x0001. When SFEN = VIL, the ODR is active and address x0001 is not available for memory accesses. When SFEN = VIH, the ODR is inactive and address x0001 can be used for standard accesses. During reads and writes to ODR DQ<4:0> are valid and DQ<15:5> are don't care. Refer to Table 4 for Output Drive Register operation. Semaphore Operation The CYDM256B16, CYDM128B16, CYDM064B16 provide eight semaphore latches, which are separate from the dual-port memory locations. Semaphores are used to reserve resources that are shared between the two ports. The state of the semaphore indicates that a resource is in use. For example, if the left port wants to request a given resource, it sets a latch by writing a zero to a semaphore location. The left port then verifies its success in setting the latch by reading it. After writing to the semaphore, SEM or OE must be deasserted for tSOP before attempting to read the semaphore. The semaphore value will be available tSWRD + tDOE after the rising edge of the semaphore write. If the left port was successful (reads a zero), it assumes control of the shared resource, otherwise (reads a one) it assumes the right port has control and continues to poll the semaphore. When the right side has relinquished control of the semaphore (by writing a one), the left side will succeed in gaining control of the semaphore. If the left side no longer requires the semaphore, a one is written to cancel its request. Semaphores are accessed by asserting SEM LOW. The SEM pin functions as a chip select for the semaphore latches (CE must remain HIGH during SEM LOW). A0-2 represents the semaphore address. OE and R/W are used in the same manner as a normal memory access. When writing or reading a semaphore, the other address pins have no effect. When writing to the semaphore, only I/O0 is used. If a zero is written to the left port of an available semaphore, a one will appear at the same semaphore address on the right port. That semaphore can now only be modified by the side showing zero (the left port in this case). If the left port now relinquishes control by writing a one to the semaphore, the semaphore will be set to one for both sides. However, if the right port had requested the semaphore (written a zero) while the left port had control, the right port would immediately own the semaphore as soon as the left port released it. Table 5 shows sample semaphore operations. Page 5 of 25
Document #: 001-00217 Rev. *E
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CYDM256B16 CYDM128B16 CYDM064B16
When reading a semaphore, all sixteen data lines output the semaphore value. The read value is latched in an output register to prevent the semaphore from changing state during a write from the other port. If both ports attempt to access the semaphore within tSPS of each other, the semaphore will definitely be obtained by one side or the other, but there is no guarantee which side will control the semaphore. On power-up, both ports should write "1" to all eight semaphores. I/O and address lines, and control signals (CE, OE, R/W). These control pins permit independent access for reads or writes to any location in memory. To handle simultaneous writes/reads to the same location, a BUSY pin is provided on each port. Two Interrupt (INT) pins can be utilized for port-to-port communication. Two Semaphore (SEM) control pins are used for allocating shared resources. With the M/S pin, the devices can function as a master (BUSY pins are outputs) or as a slave (BUSY pins are inputs). The devices also have an automatic power-down feature controlled by CE. Each port is provided with its own output enable control (OE), which allows data to be read from the device.
Architecture
The CYDM256B16, CYDM128B16, CYDM064B16 consist of an array of 4K, 8K, or 16K words of 16 dual-port RAM cells, Table 1. Non-Contending Read/Write Inputs CE H X L L L L L L X H X H X L L X X R/W X X L L L H H H X H H OE X X X X X L L L H L L X X X X UB X H L H L L H L X X H X H L X LB X H H L L H L L X X H X H X L SEM H H H H H H H H X L L L L L L High Z High Z Data In High Z Data In
Outputs I/O8-I/O15 I/O0-I/O7 High Z High Z High Z Data In Data In High Z Data Out Data Out High Z Data Out Data Out Data In Data In Operation Deselected: Power-down Deselected: Power-down Write to Upper Byte Only Write to Lower Byte Only Write to Both Bytes Read Upper Byte Only Read Lower Byte Only Read Both Bytes Outputs Disabled Read Data in Semaphore Flag Read Data in Semaphore Flag Write DIN0 into Semaphore Flag Write DIN0 into Semaphore Flag Not Allowed Not Allowed HIGH)[8] Right Port INTL X X L[9] H[10] R/WR X X L X CER X L L X OER X L X X A0R-13R X 3FFF[11] 3FFE[11] X INTR L[10] H[9] X X
[11]
Data Out High Z Data Out High Z Data Out Data Out Data In Data In
Table 2. Interrupt Operation Example (Assumes BUSYL = BUSYR = Left Port Function Set Right INTR Flag Reset Right INTR Flag Set Left INTL Flag Reset Left INTL Flag R/WL L X X X CEL L X X L OEL X X X L A0L-13L 3FFF X X 3FFE[11]
Notes: 8. See Interrupts Functional Description for specific highest memory locations by device. 9. If BUSYR = L, then no change. 10. If BUSYL = L, then no change. 11. See Functional Description for specific addresses by device.
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CYDM256B16 CYDM128B16 CYDM064B16
Table 3. Input Read Register Operation[12, 15] SFEN H L CE L L R/W H H OE L L UB L X LB L L ADDR x0000 I/O0-I/O1 I/O2-I/O15
[13] [14]
Mode Standard Memory Access IRR Read
x0000-Max VALID
VALID[13] X
VALID
Table 4. Output Drive Register [16] SFEN H L L CE L L L R/W H L H OE X
[17]
UB L[13] X X
LB L[13] L L
I/O0-I/O4 I/O5-I/O15 Mode [13] VALID[13] Standard Memory Access x0000-Max VALID x0001 x0001 VALID[14] VALID[14] X X ODR Write[16, 18] ODR Read[16]
ADDR
X L
Table 5. Semaphore Operation Example Function No action Left port writes 0 to semaphore Right port writes 0 to semaphore Left port writes 1 to semaphore Left port writes 0 to semaphore Right port writes 1 to semaphore Left port writes 1 to semaphore Right port writes 0 to semaphore Right port writes 1 to semaphore Left port writes 0 to semaphore Left port writes 1 to semaphore I/O0-I/O15 Left I/O0-I/O15 Right 1 0 0 1 1 0 1 1 1 0 1 1 1 1 0 0 1 1 0 1 1 1 Semaphore-free Left Port has semaphore token No change. Right side has no write access to semaphore Right port obtains semaphore token No change. Left port has no write access to semaphore Left port obtains semaphore token Semaphore-free Right port has semaphore token Semaphore free Left port has semaphore token Semaphore-free Status
Notes: 12. SFEN = VIL for IRR reads 13. UB or LB = VIL. If LB = VIL, then DQ<7:0> are valid. If UB = VIL then DQ<15:8> are valid. 14. LB must be active (LB = VIL) for these bits to be valid. 15. SFEN active when either CEL = VIL or CER = VIL. It is inactive when CEL = CER = VIH. 16. SFEN = VIL for ODR reads and writes. 17. Output enable must be low (OE = VIL) during reads for valid data to be output. 18. During ODR writes data will also be written to the memory.
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CYDM256B16 CYDM128B16 CYDM064B16
Maximum Ratings[19]
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage to Ground Potential ............... -0.5V to +3.3V DC Voltage Applied to Outputs in High-Z State..........................-0.5V to VCC + 0.5V DC Input Voltage[20] ...............................-0.5V to VCC + 0.5V Output Current into Outputs (LOW)............................. 90 mA Static Discharge Voltage.......................................... > 2000V Latch-up Current.................................................... > 200 mA
Operating Range
Range Commercial Ambient Temperature 0C to +70C VCC 1.8V 100 mV 2.5V 100 mV 3.0V 300 mV 1.8V 100 mV 2.5V 100 mV 3.0V 300 mV
Industrial
-40C to +85C
Electrical Characteristics for VCC = 1.8V Over the Operating Range
CYDM256B16, CYDM128B16, CYDM064B16 -40 Parameter VOH Description Output HIGH Voltage (IOH = -100 A) Output HIGH Voltage (IOH = -2 mA) Output HIGH Voltage (IOH = -2 mA) VOL Output LOW Voltage (IOL = 100 A) Output HIGH Voltage (IOL = 2 mA) Output HIGH Voltage (IOL = 2 mA) VOL ODR ODR Output LOW Voltage (IOL = 8 mA) P1 I/O P2 I/O Voltage Voltage 1.8V (any port) 2.5V (any port) 3.0V (any port) 1.8V (any port) 2.5V (any port) 3.0V (any port) 1.8V (any port) 2.5V (any port) 3.0V (any port) VIH Input HIGH Voltage 1.8V (any port) 2.5V (any port) 3.0V (any port) VIL Input LOW Voltage 1.8V (any port) 2.5V (any port) 3.0V (any port) IOZ Output Leakage Current 1.8V 2.5V 3.0V ICEX ODR ODR Output Leakage Current. VOUT = VDDIO 1.8V 2.5V 3.0V 1.8V 2.5V 3.0V 1.8V 2.5V 3.0V 1.2 1.7 2.0 -0.2 -0.3 -0.2 -1 -1 -1 -1 -1 -1 Min. VDDIO - 0.2 2.0 2.1 0.2 0.4 0.4 0.2 0.2 0.2 VDDIO + 0.2 VDDIO + 0.3 VDDIO + 0.2 0.4 0.6 0.7 1 1 1 1 1 1 1.2 1.7 2.0 -0.2 -0.3 -0.2 -1 -1 -1 -1 -1 -1 Typ. Max. Min. VDDIO - 0.2 2.0 2.1 0.2 0.4 0.4 0.2 0.2 0.2 VDDIO + 0.2 VDDIO + 0.3 VDDIO + 0.2 0.4 0.6 0.7 1 1 1 1 1 1 CYDM256B16, CYDM128B16, CYDM064B16 -55 Typ. Max. Unit V V V V V V V V V V V V V V V A A A A A A
Notes: 19. The voltage on any input or I/O pin can not exceed the power pin during power-up. 20. Pulse width < 20 ns.
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CYDM256B16 CYDM128B16 CYDM064B16
Electrical Characteristics for VCC = 1.8V (continued) Over the Operating Range
CYDM256B16, CYDM128B16, CYDM064B16 -40 Parameter IIX Description Input Leakage Current P1 I/O P2 I/O Voltage Voltage 1.8V 2.5V 3.0V ICC ISB1 Operating Current (VCC = Max., IOUT = 0 mA) Outputs Disabled Ind. 1.8V 1.8V 1.8V 2.5V 3.0V 1.8V 1.8V Min. -1 -1 -1 25 2 Typ. Max. 1 1 1 40 6 Min. -1 -1 -1 15 2 CYDM256B16, CYDM128B16, CYDM064B16 -55 Typ. Max. Unit 1 1 1 25 6 A A A mA A
Standby Current (Both Ports TTL Ind. Level) CEL and CER VCC - 0.2, SEML = SEMR = VCC - 0.2, f = fMAX Standby Current (One Port TTL Level) CEL | CER VIH, f = fMAX Standby Current (Both Ports CMOS Level) CEL & CER VCC - 0.2V, SEML and SEMR > VCC - 0.2V, f = 0 Ind. Ind.
ISB2 ISB3
1.8V 1.8V
1.8V 1.8V
8.5 2
18 6
8.5 2
14 6
mA A
ISB4
Standby Current (One Port CMOS Ind. Level) CEL | CER VIH, f = fMAX[21]
1.8V
1.8V
8.5
18
8.5
14
mA
Notes: 21. fMAX = 1/tRC = All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby ISB3.
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CYDM256B16 CYDM128B16 CYDM064B16
Electrical Characteristics for VCC = 2.5V Over the Operating Range
CYDM256B16, CYDM128B16, CYDM064B16 -40 Parameter VOH VOL VOL ODR VIH Description Output HIGH Voltage (IOH = -2 mA) Output LOW Voltage (IOL = 2 mA) ODR Output LOW Voltage (IOL = 8 mA) Input HIGH Voltage P1 I/O P2 I/O Voltage Voltage 2.5V (any port) 3.0V (any port) 2.5V (any port) 3.0V (any port) 2.5V (any port) 3.0V (any port) 2.5V (any port) 3.0V (any port) VIL IOZ ICEX ODR IIX ICC ISB1 ISB2 ISB3 Input LOW Voltage Output Leakage Current ODR Output Leakage Current. VOUT = VCC Input Leakage Current Operating Current (VCC = Max., IOUT = 0 mA) Outputs Disabled Ind. 2.5V (any port) 3.0V (any port) 2.5V 3.0V 2.5V 3.0V 2.5V 3.0V 2.5V 2.5V 2.5V 3.0V 2.5V 3.0V 2.5V 3.0V 2.5V 2.5V 1.7 2.0 -0.3 -0.2 -1 -1 -1 -1 -1 -1 39 6 Min. 2.0 2.1 0.4 0.4 0.2 0.2 VDDIO + 0.3 VDDIO + 0.2 0.6 0.7 1 1 1 1 1 1 55 8 1.7 2.0 -0.3 -0.2 -1 -1 -1 -1 -1 -1 28 6 Typ. Max. Min. 2.0 2.1 0.4 0.4 0.2 0.2 VDDIO + 0.3 VDDIO + 0.2 0.6 0.7 1 1 1 1 1 1 40 8 CYDM256B16, CYDM128B16, CYDM064B16 -55 Typ. Max. Unit V V V V V V V V V V A A A A A A mA A
Standby Current (Both Ports TTL Ind. Level) CEL and CER VCC - 0.2, SEML= SEMR = VCC - 0.2, f = fMAX Standby Current (One Port TTL Level) CEL | CER VIH, f = fMAX Standby Current (Both Ports CMOS Level) CEL & CER VCC - 0.2V, SEML and SEMR > VCC - 0.2V, f = 0 Ind. Ind.
2.5V 2.5V
2.5V 2.5V
21 4
30 6
18 4
25 6
mA A
ISB4
Standby Current (One Port CMOS Ind. Level) CEL | CER VIH, f = fMAX[21]
2.5V
2.5V
21
30
18
25
mA
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CYDM256B16 CYDM128B16 CYDM064B16
Electrical Characteristics for 3.0V Over the Operating Range
CYDM256B16, CYDM128B16, CYDM064B16 -40 Parameter VOH VOL VOL ODR VIH VIL IOZ ICEX ODR IIX ICC ISB1 ISB2 ISB3 Description Output HIGH Voltage (IOH = -2 mA) Output LOW Voltage (IOL = 2 mA) ODR Output LOW Voltage (IOL = 8 mA) Input HIGH Voltage Input LOW Voltage Output Leakage Current ODR Output Leakage Current. VOUT = VCC Input Leakage Current Operating Current (VCC = Max., IOUT = 0 mA) Outputs Disabled Ind. P1 I/O P2 I/O Voltage Voltage 3.0V (any port) 3.0V (any port) 3.0V (any port) 3.0V (any port) 3.0V (any port) 3.0V 3.0V 3.0V 3.0V 3.0V 3.0V 3.0V 3.0V 3.0V 3.0V 2.0 -0.2 -1 -1 -1 49 7 Min. 2.1 0.4 0.2 VDDIO + 0.2 0.7 1 1 1 70 10 2.0 -0.2 -1 -1 -1 42 7 Typ. Max. Min. 2.1 0.4 0.2 VDDIO + 0.2 0.7 1 1 1 60 10 CYDM256B16, CYDM128B16, CYDM064B16 -55 Typ. Max. Unit V V V V V A A A mA A
Standby Current (Both Ports TTL Ind. Level) CEL and CER VCC - 0.2, SEML = SEMR = VCC - 0.2, f = fMAX Standby Current (One Port TTL Level) CEL | CER VIH, f = fMAX Standby Current (Both Ports CMOS Level) CEL & CER VCC - 0.2V, SEML and SEMR > VCC - 0.2V, f = 0 Ind. Ind.
3.0V 3.0V
3.0V 3.0V
28 6
40 8
25 6
35 8
mA A
ISB4
Standby Current (One Port CMOS Ind. Level) CEL | CER VIH, f = fMAX[21]
3.0V
3.0V
28
40
25
35
mA
Capacitance[22]
Parameter CIN Description Input Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = 3.0V Max. 9 10 Unit pF pF
Output Capacitance COUT Note: 22. Tested initially and after any design or process changes that may affect these parameters.
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CYDM256B16 CYDM128B16 CYDM064B16
AC Test Loads and Waveforms
7
3.0V/2.5V/1.8V 3.0V/2.5V/1.8V R1 OUTPUT C = 30 pF R2 OUTPUT C = 30 pF VTH = 0.8V RTH = 6 k R1 OUTPUT C = 5 pF R2
(a) Normal Load 3.0V/2.5V R1 R2 1022 792 1.8V 13500 10800
1.8V GND
(b) Thevenin Equivalent (Load 1) ALL INPUT PULSES
90% 90% 10% 3 ns
(c) Three-State Delay (Load 2) (Used for tLZ, tHZ, tHZWE, and tLZWE including scope and jig)
10% 3 ns
Switching Characteristics for VCC = 1.8V Over the Operating Range[23]
CYDM256B16, CYDM128B16, CYDM064B16 -40 Parameter Read Cycle tRC tAA tOHA tACE[24] tDOE tLZOE
[25, 26, 27]
CYDM256B16, CYDM128B16, CYDM064B16 -55 Min. 55 Max. Unit ns 55 5 55 30 5 25 5 25 0 55 55 55 45 45 0 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Description Read Cycle Time Address to Data Valid Output Hold From Address Change CE LOW to Data Valid OE LOW to Data Valid OE Low to Low Z OE HIGH to High Z CE LOW to Low Z CE HIGH to High Z CE LOW to Power-Up CE HIGH to Power-Down Byte Enable Access Time Write Cycle Time CE LOW to Write End Address Valid to Write End Address Hold From Write End
Min. 40
Max.
40 5 40 25 5 15 5 15 0 40 40 40 30 30 0
tHZOE[25, 26, 27] tLZCE[25, 26, 27] tHZCE[25, 26, 27] tPU[27] tPD[27] tABE[24] Write Cycle tWC tSCE[24] tAW tHA
Notes: 23. Test conditions assume signal transition time of 3 ns or less, timing reference levels of VCC/2, input pulse levels of 0 to VCC, and output loading of the specified IOI/IOH and 30-pF load capacitance. 24. To access RAM, CE = L, UB = L, SEM = H. To access semaphore, CE = H and SEM = L. Either condition must be valid for the entire tSCE time. 25. At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE. 26. Test conditions used are Load 3. 27. This parameter is guaranteed but not tested. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform
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CYDM256B16 CYDM128B16 CYDM064B16
Switching Characteristics for VCC = 1.8V Over the Operating Range[23] (continued)
CYDM256B16, CYDM128B16, CYDM064B16 -40 Parameter tSA[24] tPWE tSD tHD tHZWE[26, 27] tLZWE[26, 27] tWDD[28] tDDD[28] Busy Timing tBLA tBHA tBLC tBHC tPS[30] tWB tWH tBDD[31] Interrupt Timing tINS tINR tSOP tSWRD tSPS tSAA
[29]
CYDM256B16, CYDM128B16, CYDM064B16 -55 Min. 0 40 30 0 Max. Unit ns ns ns ns 25 0 80 80 45 45 45 45 5 0 35 ns ns ns ns ns ns ns ns ns ns ns 40 45 45 15 10 10 ns ns ns ns ns ns 55 ns
Description Address Set-up to Write Start Write Pulse Width Data Set-up to Write End Data Hold From Write End R/W LOW to High Z R/W HIGH to Low Z Write Pulse to Data Delay Write Data Valid to Read Data Valid BUSY LOW from Address Match BUSY HIGH from Address Mismatch BUSY LOW from CE LOW BUSY HIGH from CE HIGH Port Set-up for Priority R/W HIGH after BUSY (Slave) R/W HIGH after BUSY HIGH (Slave) BUSY HIGH to Data Valid
[29]
Min. 0 25 20 0
Max.
15 0 55 55 30 30 30 30 5 0 20 30 35 35 10 10 10 40
INT Set Time INT Reset Time SEM Flag Update Pulse (OE or SEM) SEM Flag Write to Read Time SEM Flag Contention Window SEM Address Access Time
Semaphore Timing
Notes: 28. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform. 29. Test conditions used are Load 2. 30. Add 2ns to this parameter if VCC and VDDIOR are <1.8V, and VDDIOL is >2.5V at temperature <0C. 31. tBDD is a calculated parameter and is the greater of tWDD - tPWE (actual) or tDDD - tSD (actual).
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CYDM256B16 CYDM128B16 CYDM064B16
Switching Characteristics for VCC = 2.5V Over the Operating Range
CYDM256B16, CYDM128B16, CYDM064B16 -40 Parameter Read Cycle tRC tAA tOHA tACE[24] tDOE tLZOE[25, 26, 27] tHZOE[25, 26, 27] tLZCE[25, 26, 27] tHZCE[25, 26, 27] tPU[27] tPD[27] tABE[24] Write Cycle tWC tSCE[24] tAW tHA tSA[24] tPWE tSD tHD tHZWE[26, 27] tLZWE[26, 27] tWDD[28] tDDD[28] Busy Timing[29] tBLA tBHA tBLC tBHC tPS[30] tWB tWH tBDD[31] tINS tINR BUSY LOW from Address Match BUSY HIGH from Address Mismatch BUSY LOW from CE LOW BUSY HIGH from CE HIGH Port Set-up for Priority R/W HIGH after BUSY (Slave) R/W HIGH after BUSY HIGH (Slave) BUSY HIGH to Data Valid INT Set Time INT Reset Time 5 0 20 30 35 35 30 30 30 30 5 0 35 40 45 45 45 45 45 45 ns ns ns ns ns ns ns ns ns ns Write Cycle Time CE LOW to Write End Address Valid to Write End Address Hold From Write End Address Set-up to Write Start Write Pulse Width Data Set-up to Write End Data Hold From Write End R/W LOW to High Z R/W HIGH to Low Z Write Pulse to Data Delay Write Data Valid to Read Data Valid 0 55 55 40 30 30 0 0 25 20 0 15 0 80 80 55 45 45 0 0 40 30 0 25 ns ns ns ns ns ns ns ns ns ns ns ns Read Cycle Time Address to Data Valid Output Hold From Address Change CE LOW to Data Valid OE LOW to Data Valid OE Low to Low Z OE HIGH to High Z CE LOW to Low Z CE HIGH to High Z CE LOW to Power-Up CE HIGH to Power-Down Byte Enable Access Time 0 40 40 2 15 0 55 55 2 15 2 25 5 40 25 2 25 40 40 5 55 30 55 55 ns ns ns ns ns ns ns ns ns ns ns ns Description Min. Max. Min. CYDM256B16, CYDM128B16, CYDM064B16 -55 Max. Unit
Interrupt Timing[29]
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CYDM256B16 CYDM128B16 CYDM064B16
Switching Characteristics for VCC = 2.5V Over the Operating Range (continued)
CYDM256B16, CYDM128B16, CYDM064B16 -40 Parameter Semaphore Timing tSOP tSWRD tSPS tSAA SEM Flag Update Pulse (OE or SEM) SEM Flag Write to Read Time SEM Flag Contention Window SEM Address Access Time 10 10 10 40 15 10 10 55 ns ns ns ns Description Min. Max. Min. CYDM256B16, CYDM128B16, CYDM064B16 -55 Max. Unit
Switching Characteristics for VCC = 3.0V Over the Operating Range
CYDM256B16, CYDM128B16, CYDM064B16 -40 Parameter Read Cycle tRC tAA tOHA tACE[24] tDOE tLZOE
[25, 26, 27]
CYDM256B16, CYDM128B16, CYDM064B16 -55 Min. 55 Max. Unit ns 55 5 55 30 1 25 1 25 0 55 55 55 45 45 0 0 40 30 0 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 25 0 80 80 ns ns ns ns
Description Read Cycle Time Address to Data Valid Output Hold From Address Change CE LOW to Data Valid OE LOW to Data Valid OE Low to Low Z OE HIGH to High Z CE LOW to Low Z CE HIGH to High Z CE LOW to Power-Up CE HIGH to Power-Down Byte Enable Access Time Write Cycle Time CE LOW to Write End Address Valid to Write End Address Hold From Write End Address Set-up to Write Start Write Pulse Width Data Set-up to Write End Data Hold From Write End R/W LOW to High Z R/W HIGH to Low Z Write Pulse to Data Delay Write Data Valid to Read Data Valid
Min. 40
Max.
40 5 40 25 1 15 1 15 0 40 40 40 30 30 0 0 25 20 0 15 0 55 55
tHZOE[25, 26, 27] tLZCE[25, 26, 27] tHZCE[25, 26, 27] tPU[27] tPD[27] tABE[24] Write Cycle tWC tSCE[24] tAW tHA tSA[24] tPWE tSD tHD tHZWE[26, 27] tLZWE[26, 27] tWDD[28] tDDD[28]
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CYDM256B16 CYDM128B16 CYDM064B16
Switching Characteristics for VCC = 3.0V Over the Operating Range (continued)
CYDM256B16, CYDM128B16, CYDM064B16 -40 Parameter Busy tBLA tBHA tBLC tBHC tPS[30] tWB tWH tBDD[31] Interrupt Timing tINS tINR tSOP tSWRD tSPS tSAA Timing[29] BUSY LOW from Address Match BUSY HIGH from Address Mismatch BUSY LOW from CE LOW BUSY HIGH from CE HIGH Port Set-up for Priority R/W HIGH after BUSY (Slave) R/W HIGH after BUSY HIGH (Slave) BUSY HIGH to Data Valid
[29]
CYDM256B16, CYDM128B16, CYDM064B16 -55 Min. Max. 45 45 45 45 5 0 35 Unit ns ns ns ns ns ns ns 40 45 45 15 10 10 ns ns ns ns ns ns 55 ns
Description
Min.
Max. 30 30 30 30
5 0 20 30 35 35 10 10 10 40
INT Set Time INT Reset Time SEM Flag Update Pulse (OE or SEM) SEM Flag Write to Read Time SEM Flag Contention Window SEM Address Access Time
Semaphore Timing
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CYDM256B16 CYDM128B16 CYDM064B16
Switching Waveforms
Read Cycle No.1 (Either Port Address Access)[32, 33, 34]
tRC ADDRESS tOHA DATA OUT tAA DATA VALID tOHA
PREVIOUS DATA VALID
Read Cycle No.2 (Either Port CE/OE Access)[32, 35, 36]
tACE tDOE tLZOE DATA OUT tLZCE tPU CURRENT ICC ISB tPD DATA VALID tHZCE tHZOE
CE and LB or UB OE
Read Cycle No. 3 (Either Port)[32, 34, 37, 38]
tRC ADDRESS tAA UB or LB tHZCE tLZCE tABE CE tACE tLZCE DATA OUT tHZCE tOHA
Notes: 32. R/W is HIGH for read cycles. 33. Device is continuously selected CE = VIL and UB or LB = VIL. This waveform cannot be used for semaphore reads. 34. OE = VIL. 35. Address valid prior to or coincident with CE transition LOW. 36. To access RAM, CE = VIL, UB or LB = VIL, SEM = VIH. To access semaphore, CE = VIH, SEM = VIL. 37. R/W must be HIGH during all address transitions. 38. A write occurs during the overlap (tSCE or tPWE) of a LOW CE or SEM and a LOW UB or LB.
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CYDM256B16 CYDM128B16 CYDM064B16
Switching Waveforms (continued)
Write Cycle No.1: R/W Controlled Timing[37, 38, 39, 40, 41, 42]
tWC ADDRESS tHZOE [43] OE tAW CE
[41, 42]
tSA R/W tHZWE[43] DATA OUT NOTE 44
tPWE[40]
tHA
tLZWE NOTE 44 tSD tHD
DATA IN
Write Cycle No. 2: CE Controlled Timing[37, 38, 39, 44]
tWC ADDRESS tAW CE
[41, 42]
tSA R/W
tSCE
tHA
tSD DATA IN
tHD
Notes: 39. tHA is measured from the earlier of CE or R/W or (SEM or R/W) going HIGH at the end of write cycle. 40. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and data to be placed on the bus for the required tSD. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tPWE. 41. To access RAM, CE = VIL, SEM = VIH. 42. To access upper byte, CE = VIL, UB = VIL, SEM = VIH. To access lower byte, CE = VIL, LB = VIL, SEM = VIH. 43. Transition is measured 0 mV from steady state with a 5-pF load (including scope and jig). This parameter is sampled and not 100% tested. 44. During this period, the I/O pins are in the output state, and input signals must not be applied.
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CYDM256B16 CYDM128B16 CYDM064B16
Switching Waveforms (continued)
Semaphore Read After Write Timing, Either Side[45, 46]
tSAA A0-A2 VALID ADRESS tAW SEM tSCE tSD I/O0 tSA R/W tSWRD OE WRITE CYCLE tSOP READ CYCLE tDOE DATAIN VALID tPWE tHD DATAOUT VALID tHA tSOP VALID ADRESS tACE tOHA
Timing Diagram of Semaphore Contention[47, 48]
A0L-A2L
MATCH
R/WL SEML tSPS A0R-A2R MATCH
R/WR SEMR
Notes: 45. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high-impedance state. 46. CE = HIGH for the duration of the above timing (both write and read cycle). 47. I/O0R = I/O0L = LOW (request semaphore); CER = CEL = HIGH. 48. If tSPS is violated, the semaphore will definitely be obtained by one side or the other, but which side will get the semaphore is unpredictable.
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CYDM256B16 CYDM128B16 CYDM064B16
Switching Waveforms (continued)
Timing Diagram of Read with BUSY (M/S = HIGH)[49]
tWC ADDRESSR R/WR MATCH tPWE tSD DATA INR tPS ADDRESSL MATCH tBLA BUSYL tDDD DATAOUTL tWDD VALID VALID tHD
tBHA tBDD
Write Timing with Busy Input (M/S = LOW)
tPWE
R/W tWB
BUSY
tWH
Note: 49. CEL = CER = LOW.
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CYDM256B16 CYDM128B16 CYDM064B16
Switching Waveforms (continued)
Busy Timing Diagram No.1 (CE Arbitration) CEL Valid First[50]
ADDRESSL,R CEL tPS ADDRESS MATCH
CER
tBLC BUSYR
tBHC
CER Valid First
ADDRESSL,R CER tPS ADDRESS MATCH
CEL
tBLC BUSYL
tBHC
Busy Timing Diagram No.2 (Address Arbitration)[50] Left Address Valid First
tRC or tWC ADDRESSL ADDRESS MATCH tPS ADDRESSR tBLA BUSYR tBHA ADDRESS MISMATCH
Right Address Valid First
tRC or tWC ADDRESSR ADDRESS MATCH tPS ADDRESSL tBLA BUSYL tBHA ADDRESS MISMATCH
Note: 50. If tPS is violated, the busy signal will be asserted on one side or the other, but there is no guarantee to which side BUSY will be asserted.
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CYDM256B16 CYDM128B16 CYDM064B16
Switching Waveforms (continued)
Interrupt Timing Diagrams Left Side Sets INTR:
ADDRESSL CEL R/WL INTR tINS [52] tWC WRITE 1FFF (OR 1/3FFF) tHA[51]
Right Side Clears INTR:
ADDRESSR CER tINR [52] R/WR OER INTR
tRC READ 1FFF (OR 1/3FFF)
Right Side Sets INTL:
ADDRESSR CER R/WR INTL tINS
[52]
tWC WRITE 1FFE (OR 1/3FFE) tHA[51]
Left Side Clears INTL:
ADDRESSL CEL tINR[52] R/WL OEL INTL
Notes: 51. tHA depends on which enable pin (CEL or R/WL) is deasserted first. 52. tINS or tINR depends on which enable pin (CEL or R/WL) is asserted last.
tRC READ 1FFE OR 1/3FFE)
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CYDM256B16 CYDM128B16 CYDM064B16
Ordering Information
16K x16 1.8V Asynchronous Dual-Port SRAM Speed (ns) 40 55 55 Speed (ns) 40 55 55 Speed (ns) 40 55 55 Ordering Code CYDM256B16-40BVXC CYDM256B16-55BVXC CYDM256B16-55BVXI Package Name BZ100 BZ100 BZ100 Package Name BZ100 BZ100 BZ100 Package Name BZ100 BZ100 BZ100 Package Type 100-ball Lead-free 0.5-mm Pitch BGA 100-ball Lead-free 0.5-mm Pitch BGA 100-ball Lead-free 0.5-mm Pitch BGA Operating Range Commercial Commercial Industrial Operating Range Commercial Commercial Industrial Operating Range Commercial Commercial Industrial
8K x16 1.8V Asynchronous Dual-Port SRAM Ordering Code CYDM128B16-40BVXC CYDM128B16-55BVXC CYDM128B16-55BVXI Package Type 100-ball Lead-free 0.5-mm Pitch BGA 100-ball Lead-free 0.5-mm Pitch BGA 100-ball Lead-free 0.5-mm Pitch BGA
4K x16 1.8V Asynchronous Dual-Port SRAM Ordering Code CYDM064B16-40BVXC CYDM064B16-55BVXC CYDM064B16-55BVXI Package Type 100-ball Lead-free 0.5-mm Pitch BGA 100-ball Lead-free 0.5-mm Pitch BGA 100-ball Lead-free 0.5-mm Pitch BGA
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CYDM256B16 CYDM128B16 CYDM064B16
Package Diagram
100 VFBGA (6 x 6 x 1.0 mm) BZ100A
51-85209-*B
MoBL is a registered trademark of Cypress Semiconductor Corporation. All product and company names mentioned in this document are the trademarks of their respective holders.
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(c) Cypress Semiconductor Corporation, 2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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CYDM256B16 CYDM128B16 CYDM064B16
Document History Page
Document Title: CYDM064B16/CYDM128B16/CYDM256B16 1.8V 4K/8K/16K x 16 MOBL (R) Dual-Port Static RAM Document Number: 001-00217 REV. ** *A *B *C ECN NO. 369423 381721 396697 404777 Issue Date SEE ECN SEE ECN SEE ECN SEE ECN Orig. of Change YDT YDT KGH KGH New data sheet Updated 2.5V/3.0V ICC, ISB1, ISB2, ISB4 Updated VOL ODR to 0.2V Updated ISB2 and ISB4 typo to mA. Updated tINS and tINR for -55 to 31ns. Updated IOH and IOL values for the 1.8V, 2.5V and 3.0V parameters VOH and VOL Replaced -35 speed bin with -40 Updated Switching Characteristics for VCC = 2.5V and VCC = 3.0V Included note 35 Removed part numbers CYDM128B08 and CYDM064B08 Corrected typo for power supply description in pg 4 (3.0V instead of 3.3V) Updated tDDD timing value to be consistent with tWDD Description of Change
*D *E
426637 733676
SEE ECN SEE ECN
KGH HKH
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